description the SLD114VS is an index-guided algaas laser diode with the excellent droop characteristics. features low droop small astigmatism small package ( f 5.6mm) applications laser beam printers structure algaas double hetero structured laser diode pin photodiode for optical power output monitor recommended operating optical power output 3mw absolute maximum ratings (tc = 25?) optical power output p o 5mw reverse voltage vr ld 2 v pd 15 v operating temperature topr ?0 to +60 ? storage temperature tstg ?0 to +85 ? ?1 SLD114VS e94y21-pp index-guided algaas laser diode sony reserves the right to change products and specifications without prior notice. this information does not convey any license by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. m-260 connection diagram common ld pd 3 21 pin configuration 21 3 bottom view 1. ld cathode 2. pd anode 3. common
?2 SLD114VS optical and electrical characteristics (tc = 25?) tc: case temperature item symbol conditions min. typ. max. unit threshold current operating current operating voltage wavelength radiation angle positional accuracy differential efficiency astigmatism monitor current droop ith iop vop l q^ q // d x, d y, d z df^ df // h d as im d p p o = 3mw p o = 3mw p o = 3mw p o = 3mw p o = 3mw p o = 3mw p o = 3mw p o = 3mw, vr = 5v p o = 3mw 10 20 760 20 6 0.1 0.3 25 40 1.9 780 30 10 0.25 5 0.5 45 60 2.5 800 45 15 ?0 ? ? 0.5 15 1.2 10 ma ma v nm degree degree ? degree degree mw/ma ? ma % perpendicular parallel position angle
?3 SLD114VS example of representative characteristics optical power output vs. forward current characteristics optical power output vs. monitor current characteristics 0 1 2 3 4 5 6 7 0 102030405060 0 0.5 1.0 1.5 2.0 2.5 far field pattern (ffp) q // q^ ?0 ?0 ?0 ?0 0 10 20 30 40 10 100 ?0 0 20 40 60 80 20 40 60 80 threshold current vs. temperature characteristics 0.1 1.0 ?0 0 20 40 60 80 0.2 0.4 0.6 0.8 po = 3mw monitor current vs. temperature characteristics angle [degree] tc ?case temperature [?] tc ?case temperature [?] im ?monitor current [ma] ith ?threshold current [ma] relative radiant intensity po ?optical power output [mw] imon ?monitor current [ma] i f ?forward current [ma] tc = 10? 60? 40? 50? 60? tc = 10? 25? po = 3mw, tc = 25?
?4 SLD114VS temperature dependence of spectrum l ?wavelength [nm] po = 3mw aaa tc = 60? aa aa tc = 40? aaa aaa tc = 25? aaa aaa tc = 10? 775 780 785 790 795 relative radiant intensity
?5 SLD114VS tc = 25? po = 5mw po = 3mw po = 2mw 770 775 780 785 790 power output dependence of spectrum l ?wavelength [nm] relative radiant intensity
?6 SLD114VS package outline unit: mm sony code eiaj code jedec code reference slot 1.0 0.5 0.4 90 reference plane 1 2 f 5.6 ?0.05 f 4.4 max f 3.7 max 0.25 * 1.26 0.5 min 2.6 max 1.2 0.1 6.5 3 ? f 0.45 pcd f 2.0 ld chip & photo diode * optical distance = 1.35 0.15 m-260 1 23 m-260 package weight 0.3g 0 3
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